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Article
Publication date: 29 August 2022

Jianbin Xiong, Jinji Nie and Jiehao Li

This paper primarily aims to focus on a review of convolutional neural network (CNN)-based eye control systems. The performance of CNNs in big data has led to the development of…

Abstract

Purpose

This paper primarily aims to focus on a review of convolutional neural network (CNN)-based eye control systems. The performance of CNNs in big data has led to the development of eye control systems. Therefore, a review of eye control systems based on CNNs is helpful for future research.

Design/methodology/approach

In this paper, first, it covers the fundamentals of the eye control system as well as the fundamentals of CNNs. Second, the standard CNN model and the target detection model are summarized. The eye control system’s CNN gaze estimation approach and model are next described and summarized. Finally, the progress of the gaze estimation of the eye control system is discussed and anticipated.

Findings

The eye control system accomplishes the control effect using gaze estimation technology, which focuses on the features and information of the eyeball, eye movement and gaze, among other things. The traditional eye control system adopts pupil monitoring, pupil positioning, Hough algorithm and other methods. This study will focus on a CNN-based eye control system. First of all, the authors present the CNN model, which is effective in image identification, target detection and tracking. Furthermore, the CNN-based eye control system is separated into three categories: semantic information, monocular/binocular and full-face. Finally, three challenges linked to the development of an eye control system based on a CNN are discussed, along with possible solutions.

Originality/value

This research can provide theoretical and engineering basis for the eye control system platform. In addition, it also summarizes the ideas of predecessors to support the development of future research.

Details

Assembly Automation, vol. 42 no. 5
Type: Research Article
ISSN: 0144-5154

Keywords

Article
Publication date: 29 October 2019

Yuquan Ni, Guangneng Dong, Qi Liu, Wei Wang and Yihong Li

Babbitt bush is easy to cause severe adhesive wear due to unexpected journal fall. This paper aims to improve wear resistance of Babbitt bush.

Abstract

Purpose

Babbitt bush is easy to cause severe adhesive wear due to unexpected journal fall. This paper aims to improve wear resistance of Babbitt bush.

Design/methodology/approach

A soft/hard hybrid surface mircoprofile of Babbitt alloy/steel was fabricated by a technology of laser texture combined with hot-pressing. The friction and wear performances of bare steel (steel-h), Babbitt bush on steel (steel-s) and Babbitt filled in dimples of steel (steel-hs) were conducted on a ball-on-disc tester under dry and lubricated conditions.

Findings

The results showed that wettability of steel-hs was enhanced by forming soft/hard hybrid surface. Compared with steel-s, the stability of friction coefficient curve of steel-hs was improved without increasing coefficient friction. The wear resistance of steel-hs was remarkably enhanced under dry and lubricated conditions.

Originality/value

The originality of this paper is as following: to improve the tribological properties and to prolong service life of steel-s, soft/hard hybrid surface of Babbitt filled in dimples of steel substrate was successfully fabricated by laser texturing combined with hot-pressing. This paper showed that the lipophilicity of steel-hs was best among those of steel-s and steel-h. Babbitt alloy as a soft filler on dimples of steel substrate improved anti-wear of steel-s remarkably. It provides a new way to fabricate Babbitt as bushing on steel substrate.

Details

Industrial Lubrication and Tribology, vol. 72 no. 3
Type: Research Article
ISSN: 0036-8792

Keywords

Article
Publication date: 24 August 2022

Yanfu Wang, Xin Wang and Lifei Liu

Lapping is a vital flattening process to improve the quality of processed semiconductor wafers such as single-crystal sapphire wafers. This study aims to optimise the lapping…

90

Abstract

Purpose

Lapping is a vital flattening process to improve the quality of processed semiconductor wafers such as single-crystal sapphire wafers. This study aims to optimise the lapping process of the fixed-abrasive lapping plate of sapphire wafers with good overall performance [i.e. high material removal rate (MRR), small surface roughness (Ra) of the wafers after lapping and small lapping plate wear ratio (η)].

Design/methodology/approach

The influence of process parameters such as lapping time, abrasive size, abrasive concentration, lapping pressure and lapping speed on MRR, Ra and η of lapping-processed sapphire wafers was studied, and the results were combined with experimental data to establish a regression model. The multi-evaluation index optimisation problem was transformed into a single-index optimisation problem via an entropy method and the grey relational analysis (GRA) to comprehensively evaluate the performance of each parameter.

Findings

The results revealed that lapping time, abrasive size, abrasive concentration, lapping pressure and lapping speed had different influence degrees on MRR, Ra and η. Among these parameters, lapping time, lapping speed and abrasive size had the most significant effects on MRR, Ra and η, and the established regression equations predicted the response values of MRR, Ra and η to be 99.56%, 99.51% and 93.88% and the relative errors between the predicted and actual measured values were <12%, respectively. With increased lapping time, MRR, Ra and η gradually decreased. With increased abrasive size, MRR increased nearly linearly, whereas Ra and η initially decreased but subsequently increased. With an increase in abrasive concentration, MRR, Ra and η initially increased but subsequently decreased. With increased lapping pressure, MRR and η increased nearly linearly and continuously, whereas Ra decreased nearly linearly and continuously. With increased lapping speed, Ra initially decreased sharply but subsequently increased gradually, whereas η initially increased sharply but subsequently decreased gradually; however, the change in MRR was not significant. Comparing the optimised results obtained via the analysis of influence law, the parameters optimised via the entropy method and GRA were used to obtain sapphire wafers lapping with an MRR of 4.26 µm/min, Ra of 0.141 µm and η of 25.08, and the lapping effect was significantly improved.

Originality/value

Therefore, GRA can provide new ideas for ultra-precision processing and process optimisation of semiconductor materials such as sapphire wafers.

Details

Microelectronics International, vol. 39 no. 4
Type: Research Article
ISSN: 1356-5362

Keywords

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